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Sapphire (α-Al2O3) substrates |
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Our sapphire substrate is good for epitaxial growth of the nitride semiconductors, superconductors, and ferroelectric materials. We can provide the sapphire substrates for research and industrial use. |
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The crystal defects eliminated.
The damage layers eliminated. |
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| Crystal structure |
Colundum structure (trigonal) |
| Lattice constant |
a=0.4759 nm
c=1.299 nm |
| Melting point |
2040  |
| Density |
3.987 g/cm3 |
| Dielectric constant |
| (along c-axis) 9.41 |
(30 GHz) |
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| Tan delta |
(along c-axis) 3  10-5 |
(30 GHz) |
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 Standard (written in bold characters)
STEP substrate available for  mark |
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Al2O3 |
| Orientation |
(0001) , (01-12) , (11-20) , (01-10) |
| Size |
10mm 10mm 0.5mmt , 15mm 15mm 0.5mmt ,
dia. 50.8 0.325mmt , dia. 50.8 0.425mmt ,
dia. 76.2 0.425mmt , dia. 76.2 0.525mmt , |
| Polish |
One side / both sides |
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Please ask us |
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