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Products >  Substrates for thin film applications > MgO
Substrates for thin film applications
 
Shinkosha supplies various oxide single crystal substrates which are suitable for epitaxial growth of superconductors, compound semiconductors, dielectrics and others.
 
MgO
 
 
 
Crystal system Cubic
Structure NaCl structure
Lattice constant a=0.4213 nm
Melting point 2800
Density 3.59 g/cm3
Dielectric constant 10
Thermal expansioncoefficient 13.5 (x10-6 /)
 
  Standard specification
 
Orientation (100)
Orientation tolerance 0.5 °
Size 10 10 0.5tmm
15 15 0.5tmm
Polish One side / Both side
y[Wgbv
 
LAO(LaAlO3)
 
 
 
Crystal system Hexagonal
Structure Pseudo perovskite
Lattice constant a=0.5364 (nm)
c=1.311 (nm)
Melting point 2100
Density 6.52 (g/cm3)
Dielectric constant 15 ~ 22
Thermal expansion coefficient 12.5 (x10-6 / )
 
  Standard specification
 
Orientation (100) (pseudo cubic)
Orientation tolerance 0.5 °
Size 10 10 0.5tmm
15 15 0.5tmm
Polish One side / Both side
y[Wgbv
 
LSAT: (La0.3Sr0.7)(Al0.65Ta0.35)O3
 
 
 
Crystal system Cubic
Structure Perovskite
Lattice constant a=0.7736 nm
Melting point 1840
Density 6.79 (g/cm3)
Dielectric constant 22
Thermal expansion coefficient 10 (x10-6 / )
 
  Standard specification
 
Orientation (100)
Orientation tolerance 0.5 °
Size 10 10 0.5tmm,
15 15 0.5tmm
Polish One side / Both side
y[Wgbv
 
YSZ : Yttria Stabilized Zirconia
 
 
 
Crystal system Cubic
Structure CaF2 structure
Lattice constant a=0.5139 (nm)
Melting point 2500
Density 6.05 (g/cm3)
Dielectric constant 27
Thermal expansion coefficient 10.3 ( x10-6 / )
  Standard specification
 
Orientation (100) , (111)
Orientation tolerance 0.5 °
Size 10 10 0.5tmm
15 15 0.5tmm
Polish One side / Both side
y[Wgbv
 
MgAl2O4 (Spinel)
 
 
 
Crystal system Cubic
Structure Spinel structure
Lattice constant a=0.8083 ( nm )
Melting point 2130
Density 3.6 (g/cm3)
Thermal expansion coefficient 7.45 ( x10-6 / )
 
  Standard specification
 
Orientation (111)
Size 10 10 0.5tmm
 
y[Wgbv
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