SapphireAl2O3

We provide the most suitable sapphire substrates for epitaxial thin-film growth of group III nitride semiconductor, superconductor, and dielectrics.
Our sapphire substrate is made by in-house integrated production system starting from crystal growth (by our original TSMG method) to the surface polishing.

The quality of crystallinity, surface processing, and the cleaning and packaging have been highly evaluated by our customers both at home and abroad.

Characteristics

Composition Al2O3
Crystal system Trigonal (Rhombohedral)
Crystal structure Corundum
Lattice constant(nm) a=0.47588, c=1.2992 (As hexagonal
Melting point(℃) 2040
Density(g/cm3) 3.987
Crystal growth method TSMG method
Dielectric constant (//c-axis) 9.41 at 30 GHz
Dielectric loss (//c-axis) 3×10-5 at 30 GHz
Linear expansion coefficient(10-6/℃)

a-axis:6.93, c-axis:7.63 at 200 ℃

a-axis:8.89, c-axis:9.97 at 1000 ℃

The precise system is trigonal (a=0.513 nm, α=55.1 °), but it is generally treated as hexagonal.
X-ray rocking curve of sapphire crystal

Standard specs

Size (mm)
(Tolerance)

10×10 (±0.1), 15×15 (±0.1)

φ50.8 (±0.25) φ76.2 (±0.25)
Thickness (mm)
(Tolerance±0.05)
0.5 0.33, 0.43 0.55
Flatness(μm) <1 <10 <25
Purity(%) >99.99 >99.99 >99.99
Orientation
(Tolerance: ±0.5°)
c(0001)
r(01-12)
a(11-20)
m(10-10)

c(0001)
r(01-12)
a(11-20)

m(10-10)

c(0001)

r(01-12)

a(11-20)

m(10-10)

Polishing One-side / Both-side One-side / Both-side One-side / Both-side
Packaging unit 10pcs 25 pcs, vacuum packaging 25 pcs, vacuum packaging
Options STEP substrate
OFF substrate
Breakable substrate
STEP substrate
OFF substrate
Laser marking
STEP substrate
OFF substrate
Laser marking

※If you are looking for other specs, please contact us.
※Delivery time (about):
Standard model: 1 week after order
Special model: 1 month or more after order