Our company performs integrated production from crystal growth by CZ method to substrate processing.
Please make use of our substrate for your various epitaxial growth research.
|Crystal system||Trigonal (Pseudo-cubic)※|
|Lattice constant||a=0.379 nm (Pseudo-cubic)|
|Melting point||2100 ℃|
|Crystal growth method||CZ method|
|Density||6.52 g/cm3 (20 ℃)|
|Dielectric constant||15～22 (300 K, 1MHz)|
|Thermal expansion coefficient||12.6×10-6/℃|
|Phase transition||Approx. 420℃
(Trigonal ⇔ Cubic)
|Twin crystal||Generated by phase transition|
※The precise system is trigonal (a=0.5357 nm, α=60.1°), but it is generally treated as pseudo-cubic or hexagonal.
(Outer size tolerance: ±0.1 mm / Thickness tolerance: ±0.05 mm)
|Polishing||One-side / Both-side|
|Surface roughness||Ra≦1.0 nm, Rmax≦5.0 nm|
※If you are looking for other specs, please contact us.
※Delivery time (about):
Standard model: 1 week after order
Special model: 1 month or more after order