Properties of Sapphire

Sapphire has excellent optical, thermal, mechanical, and electrical properties, and is a material used in a variety of fields. The recent increase in the size of sapphire crystals has led to an increase in the number of applications for applying sapphire, and the replacement and improvement from other materials is progressing.

Physical Properties

Formula

α-Al2O3 (Corundum)

System

Trigonal (R-3c)

It is generally treated as a hexagonal.

Lattice constant

a = 0.47588nm
c = 1.2992nm
Density = 3.987g/cm3
Melting point = 2040℃

Optical Properties

Transmittance

0.23~5.5μm(>50% 5mmt   Optical-Grade)
0.15μm~ (>50% 1mmt   VUV-Grade)

Refractive index

no = 1.7680      ne = 1.7598 (at 577nm)

Thermal Properties

Thermal conductivity

115W/m・K(-120℃)
41W/m・K(0℃)
20W/m・K(220℃)
13W/m・K(500℃)

Specific heat

0.75kJ/kg・℃

Thermal expansion

〈⊥ c-axis
6.9×10-6/℃ (200℃)
8.9×10-6/℃ (1000℃)

   
// c-axis
7.6×10-6/℃ (200℃)
10.0×10-6/℃ (1000℃)

Mechanical Properties and Elasticity

Bending strength

470MPa (c-plane Length direction : //a-axis)
910MPa (a-plane  Length direction : //c-axis)

Hardness

〈Mohs〉9 (※Diamond = 10    Quartz = 7)
〈Vickers〉c-plane:1377        a-plane:1622

Young’s modulus

425GPa (Stress : ⊥ c-axis)
460GPa (Stress : //c-axis)

Poisson’s ratio

0.30 (⊥c / ⊥c)
0.16 (//c / ⊥c)
0.18 (⊥c / //c)

Electrical Properties

Relative permittivity

9.41 (c-axis, 30GHz)

Loss tangent (tanδ)

3×10-5  (c-axis, 30GHz)

Resistivity

1011Ωcm (500℃)
106Ωcm (1000℃)

Dielectric strength

480kV/cm (60Hz)

Chemical Properties 

Chemical resistance( Weight change of sapphire specimen, □25×0.5t, after 6 days of immersion

No change in weight(Δ = 0g)

HCl (35%, 20℃)
HNO3 (50%, 20℃)
H3PO4 (60%, 100℃)
H2SO4 (95%, 100℃)
NaOH (30%, 100℃)

Weight change micro

HF (46%, 60℃) (Δ = 0.0038g/day)