Our company performs integrated production from crystal growth by CZ method to substrate processing.
Please make use of our substrate for your various epitaxial growth research.
| Composition | LaAlO3 |
|---|---|
| Crystal system | Trigonal (Pseudo-cubic)※ |
| Crystal structure | Pseudo-perovskite |
| Lattice constant | a=0.379 nm (Pseudo-cubic) |
| Melting point | 2100 ℃ |
| Crystal growth method | CZ method |
| Density | 6.52 g/cm3 (20 ℃) |
| Dielectric constant | 15～22 (300 K, 1MHz) |
| Thermal expansion coefficient | 12.6×10-6/℃ |
| Phase transition | Approx. 420℃ (Trigonal ⇔ Cubic) |
| Twin crystal | Generated by phase transition |
※The precise system is trigonal (a=0.5357 nm, α=60.1°), but it is generally treated as pseudo-cubic or hexagonal.
Transmittance of LaAlO3
| Size (Outer size tolerance: ±0.1 mm / Thickness tolerance: ±0.05 mm) |
10×10×0.5 t 15×15×0.5 t |
|---|---|
| Orientation (Tolerance: ±0.5°) |
(100), (110) ※Pseudo-cubic |
| Polishing | One-side / Both-side |
| Surface roughness | Ra≦1.0 nm, Rmax≦5.0 nm |
| Options | STEP substrate OFF substrate Breakable substrate |
※If you are looking for other specs, please contact us.
