NaGaO3(110) is widely used as a substrate for epitaxial growth of magnetic materials, ferroelectrics, and superconductors.
The (011) plane is also attracting attention as an epitaxial substrate for GaN because its lattice length and symmetry are similar to those of GaN (0001).
Our company performs integrated production from crystal growth by CZ method to substrate processing.
We hope our substrates can help your research.
| Composition | NdGaO3 |
|---|---|
| Crystal system | Orthorhombic |
| Crystal structure | Perovskite |
| Lattice constant | a=0.5431 nm, b=0.5499 nm, c=0.7710 nm |
| Melting point | 1650 ℃ |
| Density | 7.56 g/cm3 |
| Crystal growth method | CZ method |
| Dielectric constant | 20～25 (27℃,1 MHz) |
| Thermal expansion coefficient | 10×10-6/℃ |
X-ray rocking curve of Neodymium Gallate crystal
| Size (Outer size tolerance: ±0.1 mm / Thickness tolerance: ±0.05 mm) |
10×10×0.5 t 15×15×0.5 t |
|---|---|
| Orientation (Tolerance: ±0.5°) |
(100), (001) (110), (011) |
| Polishing | One-side / Both-side |
| Surface roughness | Ra≦1.0 nm, Rmax≦5.0 nm |
| Flatness (λ=632.8 nm) |
10×10×0.5 t ≦λ 15×15×0.5 t ≦1.5 λ |
| Options | OFF substrate Breakable substrate |
※If you are looking for other specs, please contact us.
